| PART |
Description |
Maker |
| 2N4118A SST4119 2N4117A 2N4119A PN4117A PN4118A PN |
N-Channel JFETs
IC FTDI2232L USB/SERIAL 48-LQFP
MOSFET, DUAL PP SO-8MOSFET, DUAL PP SO-8; Transistor type:MOSFET; Transistor polarity:Dual P; Voltage, Vds max:12V; Case style:SO-8; Current, Id cont:4.8A; Current, Idm pulse:-20A; Power, Pd:1.1W; Resistance, Rds on:0.035R; SMD:1;
MOSFET, DUAL PP SO-8MOSFET, DUAL PP SO-8; Transistor type:MOSFET; Transistor polarity:Dual P; Voltage, Vds max:20V; Case style:SO-8; Current, Id cont:3.6A; Current, Idm pulse:40A; Power, Pd:1.1W; Resistance, Rds on:0.06R; SMD:1;
|
VISAY[Vishay Siliconix]
Vishay Intertechnology,Inc.
|
| 2N6796LCC4 |
N-Channel Power MOSFET（Vdss00VId(cont).4A，Rds(on).18ΩN沟道功率型MOS场效应管（Vdss00VId(cont).4A，Rds(on).18Ω
|
SEME-LAB[Seme LAB]
|
| IRFM150 2N7224 |
N-Channel Power MOSFET(Vdss:100V,Id(cont):34A,Rds(on):0.070惟)(N娌?????MOS?烘?搴??(Vdss:100V,Id(cont):34A,Rds(on):0.070惟))
N-Channel Power MOSFET(Vdss:100V,Id(cont):34A,Rds(on):0.070Ω)(N沟道功率MOS场效应管(Vdss:100V,Id(cont):34A,Rds(on):0.070Ω)) N沟道功率MOSFET（减振钢板基本：100V的，身份证（续）4A条的Rds（on）：0.070Ω）（不适用马鞍山沟道功率场效应管（减振钢板基本00V的，身份证（续）4A条的Rds（on.070Ω））
|
SEMELAB LTD
Electronic Theatre Controls, Inc.
TE Connectivity, Ltd.
Semelab(Magnatec)
SEME-LAB[Seme LAB]
|
| AWT6108 AWT6108M10P8 |
This quad band power amplifier module is designed to support dual, tri and quad band applications.
Power Amplifiers
Quad Band Power Amplifier Module 824 MHz - 849 MHz RF/MICROWAVE NARROW BAND MEDIUM POWER AMPLIFIER
|
Anadigics Inc
ANADIGICS, Inc.
|
| WPANTDP028 |
This single band dipole antenna is an ideal solution for single band WLAN access points operating in the ISM 2.45GHz band
|
World Produts Inc.
|
| MAX406AEPA MAX406BEPA MAX407EPA MAX409BEPA MAX409A |
Single, Dual, Quad, 1.2µA Max, Single-Supply Op Amps OP-AMP, 1100 uV OFFSET-MAX, 0.04 MHz BAND WIDTH, PDIP8
Single, Dual, Quad, 1.2µA Max, Single-Supply Op Amps OP-AMP, 3000 uV OFFSET-MAX, 0.04 MHz BAND WIDTH, PDIP8
Single, Dual, Quad, 1.2µA Max, Single-Supply Op Amps DUAL OP-AMP, 4000 uV OFFSET-MAX, 0.008 MHz BAND WIDTH, PDIP8
Single, Dual, Quad, 1.2µA Max, Single-Supply Op Amps OP-AMP, 3000 uV OFFSET-MAX, 0.15 MHz BAND WIDTH, PDIP8
Single, Dual, Quad, 1.2µA Max, Single-Supply Op Amps OP-AMP, 950 uV OFFSET-MAX, 0.15 MHz BAND WIDTH, PDSO8
|
Maxim Integrated Products, Inc.
|
| RF3198SB RF3198PCBA-41X RF3198 |
880 MHz - 915 MHz RF/MICROWAVE NARROW BAND HIGH POWER AMPLIFIER
DUAL-BAND GSM900/DCS POWER AMP MODULE
|
RF MICRO DEVICES INC
|
| MAX4480 MAX4480AUK-T MAX4480AXK-T MAX4481AUT-T MAX |
Quadruple RS-485 Differential Line Receivers 16-SOIC -40 to 85
Single/Dual/Quad / Low-Cost / Single-Supply / Rail-to-Rail Op Amps with Shutdown
Single/Dual/Quad, Low-Cost, Single-Supply, Rail-to-Rail Op Amps with Shutdown DUAL OP-AMP, 9000 uV OFFSET-MAX, 0.14 MHz BAND WIDTH, PDSO8
|
MAXIM - Dallas Semiconductor
MAXIM[Maxim Integrated Products]
Maxim Integrated Products, Inc.
|
| IRF9130SMD |
P-Channel Power MOSFET For HI-REL Application(Vdss:-100V,Id(cont):-8A,Rds(on):0.35Ω)(P沟道功率MOS场效应管,HI-REL应用(Vdss:-100V,Id(cont):-8A,Rds(on):0.35Ω))
P-CHANNEL POWER MOSFET FOR HI.REL APPLICATIONS
|
TT electronics Semelab Limited
SEME-LAB[Seme LAB]
|
| SML100W18 |
N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS
N-Channel Enhancement Mode High Voltage Power MOSFET(Vdss:1000V,Id(cont):17.3A,Rds(on):0.57Ω)(N沟道增强高电压功率MOS场效应管(Vdss:1000V,Id(cont):9A,Rds(on):1.100Ω))
|
SemeLAB
SEME-LAB[Seme LAB]
|
| IRFN340SMD |
N-Channel Power MOSFET(BVdss:400V,Id(cont):10A,Rds(on):0.55Ω)(N沟道功率MOS场效应管(BVdss:400V,Id(cont):10A,Rds(on):0.55Ω))
|
SemeLAB
SEME-LAB[Seme LAB]
|
| ISL55290IUZ-T13 |
Single and Dual Ultra-Low Noise, Ultra-Low Distortion, Low Power Op Amp DUAL OP-AMP, 500 uV OFFSET-MAX, 800 MHz BAND WIDTH, PDSO10
|
Intersil, Corp.
|
|
